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| BF 517 NPN Silicon RF Transistor * For amplifier and oscillator applications in TV-tuners Type BF 517 Marking Ordering Code LRs Q62702-F42 Pin Configuration 1=B 2=E 3=C Package SOT-23 Maximum Ratings of any single Transistor Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Symbol Values 15 20 2.5 25 50 mA Unit V VCEO VCBO VEBO IC ICM Ptot f 10 MHz Total power dissipation mW 280 150 - 65 + 150 - 65 ... + 150 340 C TS 55 C Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point 1) Tj TA Tstg RthJS K/W 1) Package mounted on aluminia 15 mm x 16,7 mm x 0,7 mm Semiconductor Group 1 Aug-02-1996 BF 517 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 15 0.1 - V nA 50 25 250 V 0.5 IC = 1 mA, IB = 0 Collector-base cutoff current ICBO hFE VCEsat VCB = 15 V, IE = 0 DC current gain IC = 5 mA, VCE = 10 V Collector-emitter saturation voltage IC = 10 mA, IB = 1 mA AC Characteristics of any single Transistor Transition frequency fT 1 2 0.55 0.25 1.45 0.8 - GHz pF 0.3 0.75 0.4 dB 2.5 - IC = 5 mA, VCE = 10 V, f = 200 MHz Collector-base capacitance Ccb Cce - VCB = 5 V, VBE = vbe = 0 , f = 1 MHz Collector-emitter capacitance VCE = 5 V, VBE = vbe = 0 , f = 1 MHz Input capacitance Cibo - VEB = 0.5 V, IC = ic = 0 , f = 1 MHz Output capacitance Cobs - VCE = 5 V, VBE = vbe = 0 , f = 1 MHz Noise figure F IC = 5 mA, VCE = 10 V, f = 100 MHz ZS = 75 Semiconductor Group 2 Aug-02-1996 BF 517 Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 300 mW Ptot TS 200 150 TA 100 50 0 0 20 40 60 80 100 120 C 150 TA ,TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax/PtotDC = f (tp) 10 3 10 3 K/W - RthJS 10 2 P totmax/PtotDC 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 Semiconductor Group 3 Aug-02-1996 BF 517 Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1MHz Transition frequency fT = f (IC) f = 500MHz VCE = Parameter 1.3 pF 1.1 3.0 GHz Ccb 1.0 0.9 0.8 0.7 fT 2.0 10V 5V 3V 2V 1.5 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 4 8 12 16 20 V 26 V CB 0.0 0 5 10 15 20 mA IC 30 0.5 1V 0.7V 1.0 Package Semiconductor Group 4 Aug-02-1996 |
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